EMIF06-MSD04F3_11 Datasheet, PDF (3/9 Pages) STMicroelectronics – 6-line low capacitance IPAD™ for micro-SD card with EMI filtering and ESD protection

EMIF06-MSD04F3
Characteristics
Table 3. Electrical characteristic
Symbol
Parameter
V_BR
I_RM
R1, R2, R3,
R4, R5, R6
Breakdown voltage
Leakage current at V_RM
Serial resistance
R7, R8, R9,
R10, R11
Pull-up resistance
C_line
F₀
t_R,t_F
Data line capacitance
Cut-off frequency
Rise and fall time
Test conditions
I_R = 1 mA
V_RM = 3 V
Tolerance ±10 %, matching ±2 %
Min. Typ. Max. Unit
14 16
V
0.1 µA
36 40 44 Ω
Tolerance ±20 %, matching ±2 %
20 25 30 kΩ
V = 1.8 V, F = 10 MHz, V_OSC = 30 mV
V = 2.9 V, F = 10 MHz, V_OSC = 30 mV
S21 = -3 dB
C_load = 10 pF, low-ref = 0.58 V,
high-ref = 1.27 V
7.5 10
pF
9
550
MHz
0.98
ns
Figure 3. S21 attenuation measurements
0 ^{S21 (dB)}
-5
-10
-15
-20
-25
-30
100k
1M
Clk
Dat1
Dat3
F (Hz)
10M
100M
1G
Dat0
Dat2
Cmd
Figure 4. Analog crosstalk measurements
0 ^dB
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
100k
1M
Clk-Dat0
10M
100M
Dat3-SDDat0
F (Hz)
1G
Doc ID 018849 Rev 1
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