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CD00002847 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 60V - 0.07ohm - 16A - D2PAK STripFET Power MOSFET
STB16NF06L
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
Gate- source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM(1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25°C
Derating Factor
dv/dt(2) Peak diode recovery avalanche energy
EAS (3)
Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤16A, di/dt ≤210A/µs, VDD =V(BR)DSS, Tj ≤TJMAX
3. Starting Tj = 25 °C, ID = 8A, VDD = 30V
Value
60
60
± 16
16
11
64
45
0.3
23
127
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering purpose
3.33
°C/W
62.5
°C/W
300
°C
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