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| BUL7216 Datasheet, PDF (3/10 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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BUL7216
2 Electrical Characteristics
2 Electrical Characteristics
Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICES Collector Cut-off Current
(VBE = 0)
VCE = 1600 V
VCE = 1600 V__ __TC = 125°C
ICEO
Collector Cut-off Current
(IB = 0)
VCE = 680 V
ICBO
Collector Cut-off Current
(IE = 0)
VCB = 1600 V
VCB = 1600 V__ _TC = 125°C
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 12 V
V(BR)CEO Collector-Emitter Breakdown
Note: 1 Voltage (IB = 0)
IC = 1 mA
L = 125 mH
V(BR)EBO Emitter-Base Breakdown Voltage IE = 1 mA
Note: 1 (IC = 0)
V(BR)CES Collector-Emitter Breakdown
Voltage (VBE = 0)
IC = 0.1 mA
700
12
1600
0.1 mA
0.5 mA
0.1 mA
0.1 mA
0.5 mA
1
mA
V
V
V
VCE(sat) Collector-Emitter Saturation
Note: 1 Voltage
IC = 0.25 A_ _
IC = 0.5 A __ _
IC = 0.8 A __ _
IB = 25 mA
IB = 50 mA
IB = 80 mA
VBE(sat)
Note: 1
Base-Emitter Saturation Voltage IC = 0.5A ____
IC = 1A _____
IC = 2A _____
IB = 100 mA
IB = 100 mA
IB = 400 mA
hFE
Note: 1 DC Current Gain
IC = 0.5 A _ VCE = 1 V
7
IC = 0.5 A ____ VCE = 3 V
16
IC = 2 A
IC = 1 A
VCE = 5 V
4
VCE = 10 V
19
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 0.5 A ___ VCC = 125 V
IB1 = 50 mA __ IB2 = -0.5 A
P.W. = 300 µs D.C. = 2 %
(see figure 9)
RESISTIVE LOAD
td
Delay Time
tr
Rise Time
IC = 0.5 A ___ VCC = 125 V
IB1 = 50 mA __ IB2 = -0.5 A
P.W. = 300 µs D.C. = 2 %
(see figure 9)
Ea/r Repetitive Avalanche Energy L = 2 mH ___ C = 1.8 nF
8
VBE(off) = -5 V (see figure 8)
1
V
1.5
V
3
V
1
V
1.1
V
1.2
V
18
35
11
0.9
µs
0.35 µs
0.3
µs
1.1
µs
mJ
Note: 1 Pulsed duration = 300 µs, duty cycle â¤1.5%.
3/10
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