BUF410 Datasheet, PDF (3/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUF410
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
ts
tf
tc
P a ram et er
Storage Time
Fall Time
Cross Over T ime
V_CEW
Maximum Collector
Emitter Voltage
without Snubber
t_s
Storage Time
tf
Fall Time
t_c
Cross Over T ime
t_s
Storage Time
tf
Fall Time
t_c
Cross Over T ime
VCEW
Maximum Collector
Emitter Voltage
without Snubber
Test Conditions
IC = 5 A
VBB = 0
Vc la mp = 400 V
L = 0.5 mH
I_C = 5 A
V_BB = 0
Vc la mp = 400 V
L = 0.5 mH
I_C = 10 A
VBB = -5 V
V_{c la mp} = 400 V
L = 0.25 mH
VCC = 50 V
RBB = 0.3 Ω
IB1 = 0.5 A
T_j =100 ^oC
V_CC = 50 V
R_BB = 0.3 Ω
IB1 = 0.5 A
T_j =125 ^oC
V_CC = 50 V
RBB =1.2 Ω
I_B1 = 2 A
I_C = 10 A
VBB = - 5 V
V_{c la mp} = 400 V
L = 0.25 mH
ICWoff = 15 A
VBB = - 5 V
L = 0.17 mH
Tj =125 ^oC
V_CC = 50 V
RBB =1.2 Ω
I_B1 = 2 A
Tj =100^oC
VCC = 50 V
RBB = 1.2 Ω
IB1 = 3 A
Min.
500
400
Typ .
1.9
0.06
0.12
Turn-on Switching Test Circuit
Turn-off Switching Test Circuit
M a x.
3
0.15
0.25
3.2
0.12
0.3
Unit
µs
µs
µs
V
µs
µs
µs
µs
µs
µs
V
1) Fast electronic switch
2) Non-inductive Resistor
Turn-on SwitchingTest Waveforms.
1) Fast electronic switch 2) Non-inductive Resistor
3) Fast recovery rectifier
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