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| BU900TP Datasheet, PDF (3/8 Pages) STMicroelectronics – NPN power TRILINTON | |||
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BU900TP
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IEBO
Emitter cut-off current
(IC = 0)
VEB = 8 V
ICES
Collector cut-off current
(VBE = 0)
VCE = 370 V
Collector-emitter
V(BR)CES breakdown voltage
IC = 50 mA
370
(VBE = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 2.5 A
_ IB = 1 mA
IC = 3 A _ _ IB = 3 mA
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 3 A
_ IB = 3 mA
hFE
DC current gain
IC = 1 A
_ VCE = 5 V 7000
VF
Diode forward voltage IC = 5 A
Es/b (1)
Secondary breakdown
energy
IC = 4 A
L = 10 mH 80
1. Pulsed duration = 300 ms, duty cycle â¤1.5%
100 µA
100 µA
660 V
4
V
4
V
3.5 V
18
V
mJ
3/8
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