BAS70J Datasheet, PDF (3/5 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

BAS70-05W / BAS70-06W
Fig. 1: Forward voltage drop versus forward
current.
BAS70J / BAS70W / BAS70-04W /
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IFM(A)
7E-2
Tj=100°C
Typical values
1E-2
1E-3
Tj=25°C
Maximum values
Tj=25°C
Typical values
VFM(V)
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IR(µA)
1E+1
1E+0
Tj=100°C
1E-1
Tj=25°C
1E-2
VR(V)
1E-3
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
Fig. 3: Reverse leakage current versus junction
temperature (typical values).
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
5E+2
1E+2
VR=70V
1E+1
1E+0
1E-1
1E-2
0
25
Tj(°C)
50
75 100 125 150
C(pF)
2.0
1.0
0.1
1
F=1MHz
Tj=25°C
VR(V)
10
100
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4 with recommended pad layout,
S(Cu)=35µm).
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35µm).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
0.10
δ = 0.2
δ = 0.1
Single pulse
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
T
δ=tp/T
1E+1
tp
1E+2
Rth(j-a) (°C/W)
600
550
P=0.2W
500
450
400
350
300
0
S(Cu) (mm )
5 10 15 20 25 30 35 40 45 50
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