9474 Datasheet, PDF (3/5 Pages) STMicroelectronics – POWER SCHOTTKY RECTIFIER

STPS3150/U
Fig. 4-1: Relative variation of thermal impedance
junction to ambient versus pulse duration (SMB).
Zth(j-c)/Rth(j-c)
1.0
SMB
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3 _{δ = 0.2}
0.2 δ = 0.1
0.1
0.0
1.E-02
Single pulse
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Fig. 4-2: Relative variation of thermal impedance
junction to ambient versus pulse duration
(DO-201AD).
Zth(j-c)/Rth(j-c)
1.0
DO-201AD
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
0.0
1.E-01
Single pulse
1.E+00
tp(s)
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
1.E+00
Tj=50°C
1.E-01
1.E-02
0
Tj=25°C
VR(V)
25
50
75
100
125
150
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(nF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
10
1
VR(V)
10
100
1000
Fig. 7: Forward voltage drop versus forward
current.
IFM(A)
100
10
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig. 8: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, Cu: 35µm) (SMB).
Rth(j-a)(°C/W)
110
100
SMB
90
80
70
60
50
40
30
20
10
S(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
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