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74V2T00 Datasheet, PDF (3/7 Pages) STMicroelectronics – DUAL 2-INPUT NAND GATE
74V2T00
DC SPECIFICATION
Test Condition
Value
Symbol
Parameter
VIH
VIL
VOH
VOL
II
ICC
∆ICC
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
VCC
(V)
4.5 to
5.5
4.5 to
5.5
4.5
4.5
4.5
4.5
0 to
5.5
IO=-50 µA
IO=-8 mA
IO=50 µA
IO=8 mA
VI = 5.5V or GND
5.5 VI = VCC or GND
One Input at 3.4V,
5.5 other input at VCC
or GND
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
2
2
2
V
0.8
0.8
0.8 V
4.4 4.5
4.4
4.4
V
3.94
3.8
3.7
0.0 0.1
0.1
0.1 V
0.36
0.44
0.55
± 0.1
± 1.0
± 1.0 µA
1
10
20 µA
1.35
1.5
1.5 mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition
Value
Symbol
Parameter
VCC CL
(V) (pF)
tPLH Propagation Delay 5.0 (*) 15
tPHL Time
5.0 (*) 50
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
5.0 7.0 1.0 8.0 1.0 8.0
ns
5.5 8.0 1.0 9.0 1.0 9.0
(*) Voltage range is 5.0V ± 0.5V
CAPACITANCE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
CIN Input Capacitance
CPD Power Dissipation
Capacitance
(note 1)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
4 10
10
10 pF
10.5
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2
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