 English |
|
|
|
|
|
|
|
| 3STL2540 Datasheet, PDF (3/11 Pages) STMicroelectronics – Low voltage high performance PNP power transistor | |||
| |||
| ◁ |
3STL2540
2
Electrical characteristics
Electrical characteristics
TJ = 25 °C; unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
IEBO
VBE(on)
Collector cut-off current
(IE = 0)
Emitter cut-off current
(IC = 0)
Base-emitter on voltage
VCE(sat) Collector-emitter saturation
(1) voltage
VCB = - 40 V
VEB = - 6 V
VCE = - 2 V IC = - 100 mA
IC = - 1 A
IC = - 2 A
IC = - 5 A
IB = - 10 mA
IB = - 100 mA
_ IB = - 250 mA
-100 nA
-100 nA
-670
mV
-200
-150
mV
-300
VBE(sat) Base-emitter saturation
(1) voltage
IC = - 1 A _ IB = - 10 mA
800
mV
hFE (1) DC current gain
VCE = - 2 V IC = - 0.5 A
280
VCE = - 2 V IC = - 2 A
210
VCE = - 2 V IC = - 5 A
100
VCE = -0.2 ÷ - 2 V IC = - 1 A 100
900
Tj = -30 °C ÷ 150 °C
Resistive load
td Delay time
tr
Rise time
ts Storage time
tf
Fall time
IC = - 2 A
VCC = - 10 V
25
VBE(off) = 5 V,
140
- IB(on) = IB(off) = 200 mA
290
60
fT Transition frequency
IC = - 0.1 A __ VCE = - 10 V
130
1. Pulse test: pulse duration â¤300 µs, duty cycle â¤2 %.
ns
ns
ns
ns
MHz
Doc ID 022059 Rev 2
3/11
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese