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| 2STL1525 Datasheet, PDF (3/8 Pages) STMicroelectronics – Low voltage high performance NPN power transistor | |||
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2STL1525
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 50 V
0.1 µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 4 V
0.1 µA
Collector-emitter
V(BR)CEX breakdown voltage
IC = 1 mA
95
V
(VBE = -1.5 V)
Collector-emitter
V(BR)CEO (1) breakdown voltage
IC = 10 mA
25
V
(IB = 0)
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 100 µA
5
V
hFE (1) DC current gain
IC = 0.5 A
IC = 3 A
IC = 5 A
VCE = 2 V
VCE = 2 V
VCE = 5 V
150
500
100
150
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 3 A
IC = 3.5 A
IB = 300 mA
IB = 40 mA
220
mV
500 mV
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 3 A
IB = 300 mA
1.2 V
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V, f = 1 MHz
20
pF
fT
Transition frequency
VCE = 10 V IC = 50 mA
120
MHz
Resistive load
ton
Turn-on time
toff
Turn-off time
IC = 1.5 A
VCC = 10 V
60
ns
IB1 = -IB2 = 150 mA
450
ns
1. Pulse test: pulse duration ⤠300 µs, duty cycle ⤠2%
Doc ID 16054 Rev 2
3/8
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