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| 2STC5948_0807 Datasheet, PDF (3/8 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor | |||
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2STC5948
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
ICBO
Collector cut-off current
(IE = 0)
VCB = 250 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
V(BR)CEO(1)
Collector-emitter
voltage (IB = 0)
breakdown
IC = 50 mA
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
V(BR)EBO
(1)
Emitter-base
(IC = 0)
breakdown
voltage
IE = 1 mA
VCE(sat)(1)
Collector-emitter saturation
voltage
IC = 8 A
VBE (1) Base-emitter on voltage
IC = 7 A
hFE DC current gain
IC = 1 A
IC = 7 A
fT
Transition frequency
IC = 1 A
1. Pulsed duration = 300 µs, duty cycle ⤠1.5%
IB = 800 mA
VCE = 5 V
VCE = 5 V
VCE = 5 V
VCE = 5 V
Min. Typ. Max. Unit
5
µA
5
µA
250
V
250
V
6
V
3
V
1.5
V
80
160
35
25
MHz
3/8
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