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| 2N6284_09 Datasheet, PDF (3/8 Pages) STMicroelectronics – Complementary power Darlington transistors | |||
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2N6284 - 2N6287
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICEV
Collector cut-off current VCE = 100 V
(VBE = -1.5 V)
VCE = 100 V Tc = 150 °C
ICEO
Collector cut-off current
(IB = 0)
VCE = 50 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB = 0)
IC = 100 mA
100
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = 10 A
IB = 40 mA
IC = 20 A __ IB = 200 mA
VBE(sat)(1)
Base-emitter saturation
voltage
IC = 20 A __ IB = 200 mA
VBE(1) Base-emitter voltage
IC = 10 A __ VCE = 3 V
hFE(1) DC current gain
IC = 10 A_ VCE = 3 V
750
IC = 20 A_ VCE = 3 V
100
hfe
Small signal current gain IC = 10 A_
VCE = 3 V
300
f = 1 kHz
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V
for 2N6284
for 2N6287
f = 100 kHz
1. Pulsed duration = 300 µs, duty cycle â¤1.5 %
For PNP type voltage and current values are negative
0.5 mA
5 mA
1 mA
2 mA
V
2
V
3
V
4
V
2.8 V
18000
400 pF
600 pF
3/8
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