2N6036_09 Datasheet, PDF(3/10 Page) STMicroelectronics – Complementary power Darlington transistors

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2N6036_09 Datasheet, PDF (3/10 Pages) STMicroelectronics – Complementary power Darlington transistors

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2N6036, 2N6039

Electrical characteristics

Note:

(Tcase = 25 Â°C; unless otherwise specified)

Table 3. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICEV

Collector cut-off current

(VBE = -1.5 V)

VCE = 80 V

VCE = 80 V, Tc = 125 Â°C

ICBO

Collector cut-off current

(IE = 0)

VCB = 80 V

ICEO

Collector cut-off current

(IB = 0)

VCE = 80 V

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

VCEO(sus)(1)

Collector-emitter

sustaining voltage

IC = 100 mA

VCE(sat)(1)

VBE(sat)(1)

Collector-emitter saturation IC = 2 A

voltage

IC = 4 A

Base-emitter saturation

voltage

IC = 4 A

IB = 8 mA

IB = 40 mA

VBE(on)

hFE(1)

hfe

Base-emitter on voltage

DC current gain

Small signal current gain

IC = 2 A

VCE = 3 V

IC = 0.5 A_ _ VCE = 3 V 500

IC = 2 A_

VCE = 3 V 750

IC = 4 A_ _ VCE = 3 V 100

IC = 0.75 A_ VCE = 10 V

f = 1 MHz

CCBO

Collector base capacitance

(IE = 0)

VCB = 10 V

for 2N6036

for 2N6039

f = 0.1 MHz

1. Pulsed duration = 300 Âµs, duty cycle 1.5%.

0.1 mA

0.5 mA

0.1 mA

2 mA

2.8 V

- 15000

100 pF

200 pF

For PNP types voltage and current values are negative.

Doc ID 5064 Rev 5

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