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2N5154HR Datasheet, PDF (3/10 Pages) STMicroelectronics – Hi-Rel NPN bipolar transistor 80 V - 5 A
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2N5154HR
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 5. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off
current (IE = 0)
VCB = 60 V
VCB = 60 V
Tamb = 150 °C
IEBO
Emitter cut-off current VEB = 5 V
(IC = 0)
VEB = 6 V
ICEO
Collector cut-off
current (IB = 0)
VCE = 40 V
Collector-emitter
V(BR)CEO (1) breakdown voltage
IC = 100 mA
80
(IB = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 5 A
IC = 2.5 A
IB = 0.5 A
IB = 250 mA
VBE(sat) (1)
Base-emitter
saturation voltage
IC = 2.5 A
IC = 5 A
IB = 0.25 A
IB = 0.5 A
hFE (1) DC current gain
IC = 50 mA
VCE = 5 V
50
IC = 2.5 A
VCE = 5 V
70
IC = 5 A
VCE = 5 V
40
IC = 2.5 A
VCE = 5 V
Tamb = - 55 °C
35
hfe
AC forward current
transfer ratio
VCE = 5 V
f = 20 MHz
IC = 500 mA 3.5
COBO
Output capacitance
IE = 0
f = 1 MHz
VCB = 10 V
ton
Turn-on time
VCC = 30 V
Vin ≅ 51 V
VBB = 4 V
IC = 5 A
IB1 = - IB2 = 0.5 A
toff
Turn-off time
VCC = 30 V
Vin ≅ 51 V
VBB = 4 V
IC = 5 A
IB1 = - IB2 = 0.5 A
1. Pulsed duration = 300 µs, duty cycle ≤ 2%
1
µA
10 µA
1
µA
1 mA
50 µA
V
1.5 V
1.45 V
1.45 V
2.2 V
200
250 pF
0.5 µs
1.3 µs
Doc ID 15387 Rev 4
3/10
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