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2N5153HR Datasheet, PDF (3/10 Pages) STMicroelectronics – Hi-Rel PNP bipolar transistor 80 V - 5 A
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2N5153HR
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 5. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off
current (IE = 0)
VCB = - 60 V
VCB = - 60 V
Tamb = 150 °C
IEBO
Emitter cut-off current VEB = - 4 V
(IC = 0)
VEB = - 5.5 V
ICEO
Collector cut-off
current (IB = 0)
VCE = - 40 V
Collector-emitter
V(BR)CEO (1) breakdown voltage
IC = - 100 mA
-80
(IB = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = - 5 A
IB = - 0.5 A
VBE(sat) (1)
Base-emitter
saturation voltage
hFE (1) DC current gain
hfe
AC forward current
transfer ratio
IC = - 2.5 A
IC = - 5 A
IB = - 0.25 A
IB = - 0.5 A
IC = - 50 mA
VCE = - 5 V 50
IC = - 2.5 A
VCE = - 5 V 70
IC = - 5 A
VCE = - 5 V 40
IC = - 2.5 A
VCE = - 5 V
Tamb = - 55 °C
35
VCE = - 5 V
f = 20 MHz
IC = - 500 mA 3.5
COBO
Output capacitance
IE = 0
f = 1 MHz
VCB = - 10 V
ton
Turn-on time
VCC = - 30 V
Vin ≅ - 51 V
VBB = - 4 V
IC = 5 A
IB1 = - IB2 = - 0.5 A
toff
Turn-off time
VCC = - 30 V
Vin ≅ - 51 V
VBB = - 4 V
IC = - 5 A
IB1 = - IB2 = - 0.5 A
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
-1 µA
-10 µA
-1 µA
-1 mA
-50 µA
V
-1.5 V
-1.45 V
-2.2 V
200
250 pF
0.5 µs
1.3 µs
Doc ID 15386 Rev 3
3/10
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