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| 2N2219AHR Datasheet, PDF (3/9 Pages) STMicroelectronics – Hi-Rel NPN bipolar transistor 40 V, 0.8 A | |||
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2N2219AHR
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
ICBO
Collector cut-off
current (IE = 0)
IEBO
Emitter cut-off current
(IC = 0)
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
VBE(sat) (1)
Base-emitter
saturation voltage
VCB = 60 V
VCB = 60 V, Tamb = 150 °C
VEB = 3 V
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
hFE (1)
hfe
DC current gain
Small signal current
gain
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
Tamb = -55 °C
VCE = 20 V, IC = 20 mA
f = 100 MHz
CCBO
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz ⤠f â¤1 MHz
ton
Turn-on time
VCC = 30 V, IC = 150 mA
IB1 = 15 mA
toff
Turn-off time
VCC = 30 V, IC = 150 mA
IB1 = -IB2 = 15 mA
1. Pulsed duration = 300 µs, duty cycle â¤2%
Min. Typ. Max. Unit
10 nA
-
10 µA
-
10 nA
75
-
V
40
-
V
6
-
V
0.3 V
-
1
V
-
1.2
V
75
100
300
40
-
35
2.5
-
-
8
pF
-
35 ns
- 300 ns
Doc ID 15294 Rev 3
3/9
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