M24128-BW Datasheet, PDF (28/40 Pages) STMicroelectronics – 128-Kbit serial I²C bus EEPROM

DC and AC parameters
M24128-BW M24128-BR M24128-BF M24128-DF
Table 15. DC characteristics (M24128-BF, M24128-DF, device grade 6)
Symbol
Parameter
Test conditions⁽¹⁾ (in addition
to those in Table 8)
Min.
Max. _Unit
I_LI
Input leakage current
V_IN = V_SS or V_CC
(E0, E1, E2, SCL, SDA) _{device in Standby mode}
I_LO
Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: V_SS or V_CC
±2
µA
±2
µA
I_CC Supply current (Read)
V_CC = 1.7 V, f_c= 400 kHz
f_c= 1 MHz⁽²⁾
0.8 mA
2.5 mA
I_CC0 Supply current (Write)
I_CC1 Standby supply current
V_IL
Input low voltage
(SCL, SDA, WC)
During t_W 1.7 V < V_CC < 2.5 V
Device not selected⁽⁵⁾,
V_IN = V_SS or V_CC, V_CC = 1.7 V
1.7 V ≤ V_CC < 2.5 V
2⁽³⁾⁽⁴⁾ mA
1
µA
–0.45 0.25 V_CC V
Input high voltage
(SCL, SDA)
V_IH
Input high voltage
(WC, E2, E1, E0)
1.7 V ≤ V_CC < 2.5 V
1.7 V ≤ V_CC < 2.5 V
0.75 V_CC 6.5
V
0.75 V_CC V_CC+0.6 V
V_OL Output low voltage
I_OL = 1 mA, V_CC = 1.7 V
0.2
V
1. If the application uses the voltage range F device with 2.5 V < V_CC < 5.5 V and -40 °C < TA < +85 °C,
please refer to Table 13 instead of this table.
2. Only for devices identified by process letter K (devices operating at f_C max = 1 MHz, see Table 17).
3. Characterized value, not tested in production.
4. 3 mA for previous devices identified by process letter A.
5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t_W (t_W is triggered by the correct decoding of a Write instruction).
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Doc ID 16892 Rev 21