M24C32-FDW5TP Datasheet, PDF (26/42 Pages) STMicroelectronics – 32-Kbit serial IC bus EEPROM

DC and AC parameters
M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF
Symbol
Table 15. DC characteristics (M24C32-R, device grade 6)
Parameter
Test conditions⁽¹⁾ (in addition to
those in Table 7)
Min.
Max. Unit
I_LI
Input leakage current
V_IN = V_SS or V_CC, device in
(E0, E1, E2, SCL, SDA) Standby mode
I_LO Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: V_SS or V_CC
-
± 2 µA
-
± 2 µA
I_CC Supply current (Read)
V_CC = 1.8 V, f_c= 400 kHz
f_c= 1 MHz⁽²⁾
-
0.8 mA
-
2.5 mA
I_CC0
Supply current (Write)⁽³⁾
During t_W,
1.8 V ≤V_CC ≤2.5 V
I_CC1 Standby supply current
Device not selected⁽⁵⁾,
V_IN = V_SS or V_CC, V_CC = 1.8 V
Input low voltage
V_IL
(SCL, SDA, WC, E2, E1,
E0)⁽⁶⁾
1.8 V ≤ V_CC < 2.5 V
-
3⁽⁴⁾
mA
-
1
µA
–0.45 0.25 V_CC V
Input high voltage
(SCL, SDA)
V_{IH Input high voltage}
(WC, E2, E1, E0)⁽⁷⁾
1.8 V ≤ V_CC < 2.5 V
1.8 V ≤ V_CC < 2.5 V
0.75 V_CC 6.5
V
0.75 V_CC V_CC+1 V
V_OL Output low voltage
I_OL = 1 mA, V_CC = 1.8 V
-
0.2
V
1.
If the application uses the voltage range R device
please refer to Table 14 instead of this table.
with
2.5
V
<
V_cc
<
5.5
V
and
-40
°C
<
T_A
<
+85
°C,
2. Only for devices operating at f_C max = 1 MHz (see note (1) in Table 19).
3. For devices identified with process letter K or T
4. Characterized value, not tested in production.
5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t_W (t_W is triggered by the correct decoding of a Write instruction).
6. E_i inputs should be tied to V_ss (see Section 2.3).
7. E_i inputs should be tied to V_cc (see Section 2.3).
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