M24C08-WBN6P Datasheet, PDF (26/40 Pages) STMicroelectronics – 8-Kbit serial I²C bus EEPROM

DC and AC parameters
M24C08-W M24C08-R M24C08-F
Symbol
Table 15. DC characteristics (M24C08-F device)
Parameter
Test conditions⁽¹⁾ (in addition to
those in Table 7, Table 8 and
Table 9)
Min.
I_LI
Input leakage current
(Ei,SCL, SDA)
V_IN = V_SS or V_CC, device in
Standby mode
-
Max. Unit
±2
µA
I_LO Output leakage current V_OUT = V_SS or V_CC, SDA in Hi-Z
-
±2
µA
I_CC
Supply current (Read)
V_CC = 1.6 V⁽²⁾ or 1.7 V,
f_c= 400 kHz
I_CC0
Supply current (Write)
Value overaged over t_W,
V_CC ≤ 2.5 V
I_CC1
Standby supply current
Device not selected⁽⁴⁾,
V_IN = V_SS or V_CC, V_CC ≤ 1.8 V
V_IL
Input low voltage
(SCL, SDA, WC)
2.5 V ≤ V_CC
V_CC < 2.5 V
Input high voltage
(SCL, SDA)
V_{IH Input high voltage}
(WC)
V_CC < 2.5 V
V_CC < 2.5 V
-
0.8
mA
-
1⁽³⁾
mA
-
1
µA
–0.45 0.3 V_CC V
–0.45 0.25 V_CC V
0.75 V_CC 6.5
V
0.75 V_CC V_CC+0.6 V
V_OL Output low voltage
I_OL = 0.7 mA, V_CC ≤ 1.8 V
-
0.2
V
1.
If the application
this table.
uses
the
voltage
range
F
device
with
2.5
V
≤V_cc
≤5.5
V,
please
refer
to
Table
13
instead
of
2. 1.6 V for devices identified by process letter T.
3.
Characterized only (not tested
than 0.5 mA when writing data
in production) for devices identified by process letter
with an ambient temperature greater than 25 °C.
T.
I_CC0(max)
is
lower
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t_W (t_W is triggered by the correct decoding of a Write instruction).
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