M48T58Y_11 Datasheet, PDF (24/33 Pages) STMicroelectronics – 5.0 V, 64 Kbit (8 Kb x 8) TIMEKEEPER® SRAM

DC and AC parameters
M48T58, M48T58Y
Table 10. Power down/up AC characteristics
Symbol
Parameter⁽¹⁾
Min
Max
Unit
t_PD E1 or W at V_IH or E2 at V_IL before power down
0
µs
t_F(2) V_PFD (max) to V_PFD (min) V_CC fall time
300
µs
t_FB(3) V_PFD (min) to V_SS V_CC fall time
M48T58
10
M48T58Y 10
µs
µs
t_R
V_PFD (min) to V_PFD (max) V_CC rise time
t_RB V_SS to V_PFD (min) V_CC rise time
t_rec V_PFD (max) to inputs recognized
10
µs
1
µs
40
200
ms
1. Valid for ambient operating temperature: T_A = 0 to 70 °C; V_CC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. V_PFD (max) to V_PFD (min) fall time of less than t_F may result in deselection/write protection not occurring
until 200 µs after V_CC passes V_PFD (min).
3. V_PFD (min) to V_SS fall time of less than t_FB may cause corruption of RAM data.
Table 11. Power down/up trip points DC characteristics
Symbol
Parameter⁽¹⁾⁽²⁾
Min
Typ
Max
Unit
M48T58 4.5
4.6
4.75
V
V_PFD Power-fail deselect voltage
M48T58Y 4.2
4.35
4.5
V
V_SO Battery backup switchover voltage
t_DR(3) Expected data retention time
3.0
7
V
Years
1. Valid for ambient operating temperature: T_A = 0 to 70 °C; V_CC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. All voltages referenced to V_SS.
3. At 25 °C, V_CC = 0 V.
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