VN5E160STR-E Datasheet, PDF (23/34 Pages) STMicroelectronics – Single channel high side driver for automotive applications

VN5E160S-E
Application information
3.1.2
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests Solution 2 is used (see below).
Solution 2: diode (D_GND) in the ground line
A resistor (R_GND=1kΩ) should be inserted in parallel to D_GND if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (~600mV) in the input
threshold and in the status output values, if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2
Load dump protection
D_ld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds to
V_CC max DC rating. The same applies if the device is subject to transients on the V_CC line
that are greater than the ones shown in the ISO T/R 7637/2 table.
3.3
MCU I/Os protection
If a ground protection network is used and negative transient are present on the V_CC line,
the control pins will be pulled negative. ST suggests that a resistor (R_prot) be inserted in line
to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os.
-V_CCpeak/I_latchup ≤R_prot ≤(V_OHµC-V_IH-V_GND) / I_IHmax
Calculation example:
For V_CCpeak= - 100V and I_latchup ≥ 20mA; V_OHµC ≥ 4.5V
5kΩ ≤R_prot ≤180kΩ.
Recommended R_prot value is 10kΩ.
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