M50LPW080 Datasheet, PDF (23/44 Pages) STMicroelectronics – 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory

M50LPW080
PROGRAM AND ERASE TIMES
The Program and Erase times are shown in Table
15..
Table 15. Program and Erase Times
Parameter
Interface Test Condition
Byte Program
Quadruple Byte Program
Chip Erase
A/A Mux
A/A Mux
V_PP = 12V ± 5%
V_PP = 12V ± 5%
Block Program
A/A Mux
V_PP = 12V ± 5%
V_PP = V_CC
Block Erase
Program/Erase Suspend to Program pause ⁽³⁾
V_PP = 12V ± 5%
V_PP = V_CC
Program/Erase Suspend to Block Erase pause ⁽³⁾
Note: 1. T_A = 25°C, V_CC = 3.3V
2. This time is obtained executing the Quadruple Byte Program Command.
3. Sampled only, not 100% tested.
Min _Typ ⁽¹⁾ Max
10 200
10 200
9
0.1 ⁽²⁾
5
0.4
5
0.75
8
1
10
5
30
Unit
µs
µs
sec
sec
sec
sec
sec
µs
µs
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