M28W800BT Datasheet, PDF (22/42 Pages) STMicroelectronics – 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

M28W800BT, M28W800BB
Table 13. Write AC Characteristics, Write Enable Controlled
Symbol
Alt
Parameter
M28W800B
Unit
70
85
90
100
t_AVAV
t_WC Write Cycle Time
Min
70
85
90
100 ns
t_AVWH
t_AS Address Valid to Write Enable High
Min
45
45
50
50 ns
t_DVWH
t_DS Data Valid to Write Enable High
Min
45
45
50
50 ns
t_ELWL
t_CS Chip Enable Low to Write Enable Low
Min
0
0
0
0
ns
t_ELQV
Chip Enable Low to Output Valid
Min
70
85
90
100 ns
t_QVVPL ^(1,2)
Output Valid to V_PP Low
Min
0
0
0
0
ns
t_QVWPL
Output Valid to Write Protect Low
Min
0
0
0
0
ns
t_VPHWH ^{(1) t}VPS ^VPP ^{High to Write Enable High}
Min 200 200 200 200 ns
t_WHAX
t_AH Write Enable High to Address Transition
Min
0
0
0
0
ns
t_WHDX
t_DH Write Enable High to Data Transition
Min
0
0
0
0
ns
t_WHEH
t_CH Write Enable High to Chip Enable High
Min
0
0
0
0
ns
t_WHEL
Write Enable High to Chip Enable Low
Min
25
25
30
30 ns
t_WHGL
Write Enable High to Output Enable Low Min
20
20
30
30 ns
t_WHWL
t_WPH Write Enable High to Write Enable Low
Min
25
25
30
30 ns
t_WLWH
t_WP Write Enable Low to Write Enable High
Min
45
45
50
50 ns
t_WPHWH
Write Protect High to Write Enable High
Min
45
45
50
50 ns
Note: 1. Sampled only, not 100% tested.
2. Applicable if V_PP is seen as a logic input (V_PP < 3.6V).
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