VN5160STR-E Datasheet, PDF (20/31 Pages) STMicroelectronics – Single channel high side driver for automotive applications

Application Information
3
Application Information
Figure 28. Application schematic
+5V
+5V
V_CC
R_prot
STAT_DIS
R_prot
µC
R_prot
INPUT
STATUS
GND
V_GND
R_GND
OUTPUT
D_GND
VN5160S-E
D_ld
3.1
3.1.1
GND protection network against reverse battery
Solution 1: resistor in the ground line (R_GND only)
This can be used with any type of load.
The following is an indication on how to dimension the R_GND resistor.
1. R_GND  600mV / (I_S(on)max)
2. R_GND V_CC) / (-I_GND)
where -I_GND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in R_GND (when V_CC<0: during reverse battery situations) is:
P_D= (-V_CC)²/ R_GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I_S(on)max becomes the sum of the
maximum On-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R_GND will produce a shift (I_S(on)max * R_GND) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R_GND.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
20/31
Doc ID 13493 Rev 5