TYN606 Datasheet, PDF (2/4 Pages) STMicroelectronics – SCR

TYN606 TYN1006
THERMAL RESISTANCE
Symbol
Rth (j-a)
Rth (j-c) DC
Junction to ambient
Junction to case for DC
Parameter
GATE CHARACTERISTICS (maximum values)
P_G(AV) = 1W P_GM = 10W (tp = 20µs) I_FGM = 4A (tp = 20µs) V_RGM = 5V
ELECTRICAL CHARACTERISTICS
Symbol
Test conditions
IGT
VD = 12V (DC) RL = 33Ω
VGT
VD = 12V (DC) RL = 33Ω
VGD
VD = VDRM
RL = 3.3kΩ
tgt
VD = VDRM IG = 40mA
dI_G/dt = 0.5A/µs
IL
IG = 1.2IGT
IH
IT = 100mA Gate open
VTM
ITM = 12A tp = 380µs
IDRM
IRRM
VDRM rated
V_RRM rated
dV/dt
tq
Linear slope up to
VD = 67% VDRM gate open
VD=67%VDRM ITM= 12A VR= 25V
dI_TM/dt=30 A/µs dV_D/dt= 50V/µs
Tj = 25°C
Tj = 25°C
Tj =110°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 110°C
Tj = 110°C
Tj = 110°C
MAX.
MAX.
MIN.
TYP.
TYP.
MAX.
MAX.
MAX.
MAX.
MIN.
TYP.
Value
60
2.5
Unit
°C/W
°C/W
Value
15
1.5
0.2
2
50
30
1.6
0.01
2
200
70
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
µs
Fig. 1: Maximum average power dissipation ver-
sus average on-state current.
P (W)
7
360 ^O
6
5
DC
4
= 180^o
3
= 120^o
2
= 90 ^o
= 60^o
1
= 30^o
IT(AV)(A)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 2: Correlation between maximum average
power dissipation and maximum allowable temper-
atures (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
7
6
5
Tcase (^oC)
Rth = 0 ^o C/W
5^o C/W -110
10 ^o C/W
15 ^o C/W
4
= 180^o
3
-115
2
-120
1
Tamb (^oC)
0
-125
0
20 40 60 80 100 120 140
2/4