TPB Datasheet, PDF (2/5 Pages) STMicroelectronics – TRISIL

TPB SERIES
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
P
Power dissipation on infinite heatsink
T_amb = 50 °C
IPP
Peak pulse current
10/1000 µs
8/20 µs
2/10 µs
I_TSM Non repetitive surge peak on-state current
I²t
I²t value for fusing
tp = 20 ms
tp = 20 ms
dV/dt Critical rate of rise of off-state voltage
VRM
Tstg
Storage temperature range
T_j
Maximum junction temperature
TL
Maximum lead temperature for soldering during 10s at 5mm for
case
THERMAL RESISTANCES
Value
5
100
150
500
50
25
5
- 55 to + 150
150
230
Symbol
R_th (j-l)
Rth (j-a)
Parameter
Junction to leads (L_lead = 10mm)
Junction to ambient on printed circuit (Llead = 10 mm)
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C)
Value
20
75
Symbol
VRM
IRM
VR
VBR
V_BO
IH
IBO
I_PP
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous Reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
Unit
W
A
A
A²s
kV/µs
°C
°C
°C
Unit
°C/W
°C/W
Type
IRM @ VRM
max.
IR @ VR
max.
note1
VBO @ IBO
max.
note2
IH
min.
note3
C
max.
note4
µA
V
µA
V
V
mA
mA
pF
TPB62
2
TPB68
2
TPB100
2
TPB120
2
TPB130
2
TPB180
2
TPB200
2
TPB220
2
TPB240
2
TPB270
2
56
50
62
82
800
150
300
61
50
68
90
800
150
300
90
50
100
133
800
150
200
108
50
120
160
800
150
200
117
50
130
173
800
150
200
162
50
180
240
800
150
200
180
50
200
267
800
150
200
198
50
220
293
800
150
200
216
50
240
320
800
150
200
243
50
270
360
800
150
200
Note 1:
Note 3:
2/5
IR measured at VR guarantees VBRmin ≥ VR
See test circuit 2.
Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1.
Note 4: VR = 1V, F = 1MHz, refer to fig.3 for C versus VR .