TN8 Datasheet, PDF (2/9 Pages) STMicroelectronics – 8A SCRs

TN8, TS8 and TYNx08 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SENSITIVE
Symbol
Test Conditions
I_GT
V_GT
V_GD
V_RG
I_H
I_L
dV/dt
V_TM
V_t0
R_d
I_DRM
I_RRM
V_D = 12 V R_L = 140 Ω
V_D = V_DRM R_L = 3.3 kΩ R_GK = 220 Ω
I_RG = 10 µA
I_T = 50 mA R_GK = 1 kΩ
I_G = 1 mA R_GK = 1 kΩ
V_D = 65 % V_DRM R_GK = 220 Ω
I_TM = 16 A tp = 380 µs
Threshold voltage
Dynamic resistance
V_DRM = V_RRM R_GK = 220 Ω
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TS820
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
s STANDARD
Symbol
Test Conditions
I_GT
V_GT
V_GD
V_D = 12 V R_L = 33 Ω
V_D = V_DRM R_L = 3.3 kΩ
Tj = 125°C
I_H
I_L
dV/dt
V_TM
V_t0
R_d
I_DRM
I_RRM
I_T = 100 mA Gate open
I_G = 1.2 I_GT
V_D = 67 % V_DRM Gate open
I_TM = 16 A tp = 380 µs
Threshold voltage
Dynamic resistance
V_DRM = V_RRM
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TN805 TN815 TYNx08
0.5
2
2
5
15
15
1.3
0.2
25 40
30
30 50
70
50 150
150
1.6
0.85
46
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
THERMAL RESISTANCES
Symbol
R_th(j-c)
R_th(j-a)
Junction to case (DC)
Junction to ambient (DC)
S= copper surface under tab
Parameter
S = 0.5 cm^²
TO-220AB
IPAK
DPAK
Value
20
60
100
70
Unit
°C/W
°C/W
2/9
/T