TN12 Datasheet, PDF (2/11 Pages) STMicroelectronics – SENSITIVE & STANDARD(12A SCRs)

TN12, TS12 and TYNx12 Series
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
Value
TN12-G TN12-B/H ^Unit
TYN12 TS12-B/H
I_T(RMS) RMS on-state current (180° conduction angle) T_c = 105°C
IT_(AV)
Average on-state current (180° conduction
angle)
T_c = 105°C
I_TSM
Non repetitive surge peak on-
state current
t_p = 8.3 ms
t_p = 10 ms
T_j = 25°C
I^²t I^²t Value for fusing
t_p = 10 ms T_j = 25°C
dI/dt
Critical rate of rise of on-state
current I_G = 2 x I_GT , t_r ≤ 100 ns
F = 60 Hz
T_j = 125°C
I_GM Peak gate current
t_p = 20 µs
P_G(AV) Average gate power dissipation
T_j = 125°C
T_j = 125°C
T_{stg Storage junction temperature range}
T_j Operating junction temperature range
V_RGM Maximum peak reverse gate voltage (for TN12 & TYN12 only)
12
8
145
115
140
110
98
60
50
4
1
- 40 to + 150
- 40 to + 125
5
A
A
A
A²S
A/µs
A
W
°C
V
Tables 4: Electrical Characteristics (T_j = 25°C, unless otherwise specified)
■ SENSITIVE
Symbol
Test Conditions
I_GT
V_D = 12 V
V_GT
R_L = 140 Ω
MAX.
MAX.
V_GD V_D = V_DRM R_L = 3.3 kΩ R_GK = 1 kΩ T_j = 125°C
MIN.
V_RG I_RG = 10 µA
MIN.
I_H
I_T = 50 mA R_GK = 1 kΩ
MAX.
I_L
I_G = 1 mA R_GK = 1 kΩ
MAX.
dV/dt V_D = 65 % V_DRM R_GK = 220 Ω
T_j = 125°C MIN.
V_TM I_TM = 24 A tp = 380 µs
T_j = 25°C
MAX.
V_t0 Threshold voltage
T_j = 125°C MAX.
R_d Dynamic resistance
T_j = 125°C MAX.
I_DRM
I_RRM
V_DRM = V_RRM
R_GK = 220 Ω
T_j = 25°C
T_j = 125°C
MAX.
TS1220
200
0.8
0.1
8
5
6
5
1.6
0.85
30
5
2
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
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