TLC116 Datasheet, PDF (2/5 Pages) STMicroelectronics – SENSITIVE GATE TRIACS

TLC116 T/D/S/A ---> TLC386 T/D/S/A
THERMAL RESISTANCES
Symbol
Rth (j-a)
Parameter
Junction to ambient on printed circuit with Cu surface 1cm2
Rth (j-l) DC Junction leads for DC
Rth (j-l) AC Junction leads for 360° conduction angle ( F= 50 Hz)
Value
50
20
15
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG _(AV) = 0.1W PGM = 2W (tp = 20 µs) IGM = 1A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
T
D
S
A
IGT
VD=12V (DC) RL=33Ω Tj=25°C
I-II-III
IV
MAX 5
5 10 10 mA
MAX 5 10 10 25
VGT
VGD
tgt
IL
VD=12V (DC) RL=33Ω Tj=25°C
I-II-III-IV MAX
1.5
V
VD=VDRM RL=3.3kΩ
Tj=110°C I-II-III-IV MIN
0.2
V
VD=VDRM IG = 40mA
Tj=25°C I-II-III-IV TYP
2
µs
dIG/dt = 0.5A/µs
IG= 1.2 IGT
Tj=25°C
I-III-IV
MAX 15 15 25 25 mA
II
15 15 25 25
IH *
VTM *
IDRM
IRRM
IT= 100mA gate open
ITM= 4A tp= 380µs
VDRM Rated
VRRM Rated
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
MAX 15 15 25 25 mA
MAX
1.85
V
MAX
0.01
mA
MAX
0.75
dV/dt *
Linear slope up to Tj=110°C
VD=67%VDRM
gate open
TYP 10 10 20 20 V/µs
(dV/dt)c * (dI/dt)c = 1.3A/ms
Tj=110°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
TYP 1
1
5
5 V/µs
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