TIP41A Datasheet, PDF (2/4 Pages) Motorola, Inc – POWER TRANSISTORS COMPLEMENTARY SILICON

TIP41A/TIP41B/TIP41C/TIP42A/TIP42C
THERMAL DATA
R_thj-case Thermal Resistance Junction-case
R_thj-amb Thermal Resistance Junction-ambient
Max
Max
1.92
62.5
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I_CEO
Collector Cut-off
Current (IB = 0)
for TIP41A/42A
V_CE = 30 V
for TIP41B/41C/42C VCE = 60 V
I_CES
Collector Cut-off
Current (V_BE = 0)
for TIP41A/42A
for TIP41B
for TIP41C/42C
V_CE = 60 V
V_CE = 80 V
VCE = 100 V
IEBO
Emitter Cut-off Current
(I_C = 0)
V_CEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
VEB = 5 V
I_C = 30 mA
for TIP41A/42A
for TIP41B
for TIP41C/42C
V_CE(sat)* Collector-Emitter
Saturation Voltage
I_C = 6 A
I_B = 0.6 A
VBE(on)* Base-Emitter Voltage IC = 6 A
VCE = 4 V
hFE* DC Current Gain
IC = 0.3 A
I_C = 3 A
VCE = 4 V
V_CE = 4 V
h_fe
Small Signal Current I_C = 0.5 A
Gain
IC = 0.5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
V_CE = 10 V f = 1 KHz
VCE = 10 V f = 1 MHz
Min. Typ.
60
80
100
30
15
20
3
Max.
0.7
0.7
0.4
0.4
0.4
1
1.5
2
75
Unit
mA
mA
mA
mA
mA
mA
V
V
V
V
V
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