TIP35C Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

TIP35C / TIP36B / TIP36C
THERMAL DATA
R_thj-case Thermal Resistance Junction-case
Max
1
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I_CEO
Collector Cut-off
Current (I_B = 0)
IEBO
Emitter Cut-off Current
(I_C = 0)
I_CES
Collector Cut-off
Current (V_BE = 0)
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
V_CE = 60 V
VEB = 5 V
V_CE = Rated V_CEO
IC = 30 mA
for TIP36B
for TIP35C/36C
hFE* DC Current Gain
IC = 1.5 A
I_C = 15 A
VCE = 4 V
V_CE = 4 V
V_CE(sat)* Collector-Emitter
Saturation Voltage
I_C = 15 A
IC = 25 A
I_B = 1.5 A
IB = 5 A
VBE(on)* Base-Emitter Voltage
IC = 15 A
I_C = 25 A
VCE = 4 V
V_CE = 4 V
f_T
Transition Frequency I_C = 1 A V_CE = 10 V f = 1 MHz
h_fe
Small Signal Current I_C = 1 A
Gain
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
V_CE = 10 V f = 1 KHz
Min. Typ.
80
100
25
10
3
25
Max.
1
1
0.7
50
1.8
4
2
4
Unit
mA
mA
mA
V
V
V
V
V
MHz
2/4