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| TIP33C Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS | |||
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TIP33C / TIP34C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.56
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off
Current (VBE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)â Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)â Collector-Emitter
Saturation Voltage
VBE(on)â Base-Emitter Voltage
VCE = 140 V
VCE = 60 V
VEB = 5 V
IC = 30 mA
IC = 3 A
IC = 10 A
IC = 3 A
IC = 10 A
IB = 0.3 A
IB = 2.5 A
VCE = 4 V
VCE = 4 V
hFEâ DC Current Gain
IC = 1 A
IC = 3 A
VCE = 4 V
VCE = 4 V
hfe
Small Signal Current IC = 0.5 A
Gain
f = 1 KHz
VCE = 10 V
fT
Transition frequency IC = 0.5 A
f = 1 MHz
VCE = 10 V
RESISTIVE LOAD
VCC = 30V
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
VBB = - 6 V
tp = 20 µs
â Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC = 6 A
IB1 = - IB2 = 0.6 A
Min. Typ.
100
40
20
20
3
0.6
0.4
1
Max.
400
0.7
1
1
4
1.6
3
100
Unit
µA
mA
mA
V
V
V
V
V
MHz
µs
µs
µs
2/4
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