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| TIP31A Datasheet, PDF (2/5 Pages) Motorola, Inc – POWER TRANSISTORS COMPLEMENTARY SILICON | |||
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TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.12
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
P ar am et e r
Test Conditions
ICEO
ICES
Collector Cut-off
Current (IB = 0)
Collector Cut-off
Current (VBE = 0)
for T IP31A/32A
for T IP31C/32B/32C
for T IP31A/32A
for T IP/ 32B
for T IP31C/32C
VCE = 30 V
VCE = 60 V
VCE = 60 V
VCE = 80 V
VCE = 100 V
IEBO Emitter Cut-of f Current
(IC = 0)
VCEO(s us)â Collector-Emitt er
Sustaining Voltage
(IB = 0)
VEB = 5 V
IC = 30 mA
for TIP31A/32A
for TIP32B
for TIP31C/32C
VCE(sat)â Collector-Emitt er
Saturation Voltage
IC = 3 A
VBE(on)â Base-Emitter Voltage IC = 3 A
hFEâ DC Current Gain
IC = 1 A
IC = 3 A
hfe
Small Signall Current IC = 0.5 A
Gain
IC = 0.5 A
â Pulsed : pulse duration = 300 µs, duty cycle ⤠2%
For PNP types voltage and current values are negative.
IB = 375 mA
VCE = 4 V
VCE = 4 V
VCE = 4 V
VCE = 10 V f = 1 KHz
VCE = 10 V f = 1 MHz
Min.
60
80
100
25
10
20
3
Typ.
Max.
0.3
0.3
0.2
0.2
0.2
1
1.2
1.8
50
Unit
mA
mA
mA
mA
mA
mA
V
V
V
V
V
Safe Operating Area
Derating Curves
2/5
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