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| TIP2955 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTOR | |||
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TIP2955/TIP3055
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.4
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX
Collector Cut-off
VCE = 100 V
Current (VBE = -1.5V) VCE = 100 V
TJ = 150 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)â Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)â Collector-emitter
Saturation Voltage
VCE = 30 V
VEB = 7 V
IC = 30 mA
IC = 4 A
IC = 10 A
IB = 0.4 A
IB = 3.3 A
VBEâ Base-emitter Voltage IC = 4 A
VCE = 4 V
hFEâ DC Current Gain
IC = 4 A
IC = 10 A
VCE = 4 V
VCE = 4 V
hfe
Small Signal Current IC = 1 A VCE = 10 V f = 1 KHz
Gain
fT
Transition-Frequency IC = 0.5 A VCE = 10 V f = 1 MHz
RESISTIVE LOAD
ton
Turn-on Time
toff
Turn-off Time
IC = 6 A
RL = 5 â¦
â Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type, voltage and current value are negative.
IB1 = - IB2 = 0.6 A
VBE(off) = - 4 V
Min.
60
20
5
15
3
Typ.
0.5
0.9
Max.
1
5
0.7
5
1
3
1.8
70
Unit
mA
mA
mA
mA
V
V
V
V
MHz
µs
µs
2/4
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