TIP142T Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP142T / TIP147T
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.38
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
Collector Cut-off
Current (IE = 0)
Collector Cut-off
Current (IB = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Sustaining Voltage
(IB = 0)
Collector-Emitter
Saturation Voltage
VCB = 100 V
VCE = 50 V
VEB = 5 V
IC = 30 mA
IC = 5 A
IC = 10 A
IB = 10 mA
IB = 40 mA
VBE(on)* Base-Emitter Voltage IC =10 A
VCE = 4 V
hFE* DC Current Gain
IC = 5 A
IC = 10 A
VCE = 4 V
VCE = 4 V
RESISTIVE LOAD
ton
Turn-on Time
toff
Turn-off Time
IC = 10 A
IB2 = -40 mA
For PNP types voltage and current values are negative.
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
IB1 = 10 mA
RL = 3 Ω
Min. Typ.
100
1000
500
0.9
4
Max.
1
2
2
2
3
3
Unit
mA
mA
mA
V
V
V
V
µs
µs
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