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TIP132 Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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TIP132 / TIP135 / TIP137
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.78
63.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Pa ram et e r
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
VCE = Half Rat ed VCEO
ICBO
Collector Cut-off
Current (IE = 0)
VCB = Rated VCBO
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
VCEO(sus )* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA
for TIP135
for TIP132/TIP137
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 4 A
IC = 6 A
IB = 16 mA
IB = 30 mA
VBE* Base-Emitter Voltage IC = 4 A
VCE = 4 V
hFE* DC Current Gain
IC = 1 A
IC = 4 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 4 V
VCE = 4 V
Min. Typ.
60
100
500
1000
Max.
0.5
0.2
5
2
4
2.5
15000
Unit
mA
mA
mA
V
V
V
V
V
Safe Operating Areas
Power Derating Curve
2/4
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