TIP127FP_03 Datasheet, PDF (2/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP122FP / TIP127FP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
4.3
62.5
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
ICBO
Collector Cut-off
Current (IE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)* Collector-Emitter
Saturation Voltage
VCE = 50 V
VCB = 100 V
VEB = 5 V
IC = 30 mA
IC = 3 A
IC = 5 A
IB = 12 mA
IB = 20 mA
VBE(on)* Base-Emitter Voltage IC = 3 A
VCE = 3 V
hFE* DC Current Gain
IC = 0.5 A
IC = 3 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
For PNP types voltage and current values are negative.
VCE = 3 V
VCE = 3 V
Min. Typ.
100
1000
1000
Max.
0.5
0.2
2
2
4
2.5
Unit
mA
mA
mA
V
V
V
V
Safe Operating Area
Derating Curve
2/6