TIP122FP Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP122FP / TIP127FP
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
R_{thj- amb} Thermal Resistance Junction-ambient
Max
Max
4.3
62.5
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICEO
Collector Cut-off
Current (I_B = 0)
I_CBO
Collector Cut-off
Current (IB = 0)
I_EBO Emitt er Cut-off Current
(IC = 0)
V_{CEO(s us)} * Collect or-Emitter
Sustaining Voltage
(I_B = 0)
V_{CE(s at)}* Collect or-Emitter
Saturation Voltage
VCE = 50 V
V_CE = 100 V
V_EB = 5 V
I_C = 30 mA
I_C = 3 A
IC = 5 A
I_B = 12 mA
IB = 20 mA
VBE(on) * Base-Emitt er Voltage IC = 3 A
VCE = 3 V
h_FE* DC Current G ain
I_C = 0.5 A
IC = 3 A
* For PNP types voltage and current values are negative.
V_CE = 3 V
VCE = 3 V
Min. Typ.
100
1000
1000
M a x.
0.5
0.2
2
2
4
2.5
Unit
mA
mA
mA
V
V
V
V
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