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TIP110 Datasheet, PDF (2/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.0A,60-100V,50W)
TIP110/TIP112/TIP115/TIP117
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj- amb Thermal Resistance Junction-ambient
Max
Max
2.5
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
ICBO
Collector Cut-off
Current (IE = 0)
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(sus )∗ Collector-Emit ter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = Half Rated VCEO
VCB = Rated VCBO
VEB = 5 V
IC = 30 mA
for TIP110/115
for TIP112/117
IC = 2 A
IB = 8 mA
VBE∗ Base-Emitt er Voltage IC = 2 A
hF E∗ DC Current Gain
IC = 1 A
IC = 2 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 4 V
VCE = 4 V
VCE = 4 V
Min. Typ.
60
100
1000
500
Max.
2
1
2
2.5
2.8
Unit
mA
mA
mA
V
V
V
V
Safe Operating Areas
Derating Curve
2/6