TIP105_03 Datasheet, PDF (2/5 Pages) STMicroelectronics – PNP SILICON POWER DARLINGTON TRANSISTOR

TIP105
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICEO
ICBO
IEBO
VCEO(sus)*
VCE(sat)*
Collector Cut-off
Current (IB = 0)
Collector Cut-off
Current (IE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Sustaining Voltage
(IB = 0)
Collector-Emitter
Saturation Voltage
VCE = -30 V
VCE = -60 V
VEB = -5 V
IC = -30 mA
IC = -3 A
IC = -8 A
-60
IB = -6 mA
IB = -80 mA
-50
µA
-50
µA
-8
mA
V
-2
V
-2.5
V
VBE* Base-Emitter Voltage IC = -8 A
VCE = -4 V
-2.8
V
hFE* DC Current Gain
IC = -3 A
IC = -8 A
IC = -3 A
Group R
Group O
Group Y
VCE = -4 V
VCE = -4 V
VCE = -4 V
2000
200
2000
4000
8000
18000
5000
9000
18000
VF* Forward Voltage of
IF = - IC = 10 A
-2.8
V
Commutation Diode
(IB = 0)
The product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
Safe Operating Area
DC Current Gain
2/5