TIP102_03 Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP102 / TIP107
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
ICBO
Collector Cut-off
Current (IE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)* Collector-Emitter
Saturation Voltage
VCE = 50 V
VCB = 100 V
VEB = 5 V
IC = 30 mA
IC = 3 A
IC = 8 A
IB = 6 mA
IB = 80 mA
VBE* Base-Emitter Voltage IC = 8 A
VCE = 4 V
hFE* DC Current Gain
IC = 3 A
IC = 8 A
VCE = 4 V
VCE = 4 V
VF* Forward Voltage of
IF = - IC = 10 A
Commutation Diode
(IB = 0)
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Min.
Typ.
Max.
50
Unit
µA
50
µA
8
mA
100
V
1000
200
2
V
2.5
V
2.8
V
20000
2.8
V
Safe Operating Area
2/4