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TIP102 Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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TIP102 / TIP105 / TIP107
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
P ar am et e r
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
for TIP105
for T IP102/TIP107
ICBO
Collector Cut-off
Current (IE = 0)
for TIP105
for T IP102/TIP107
IEBO
Emitter Cut-of f Current VEB = 5 V
(IC = 0)
VCEO(sus )* Collector-Emitt er
Sustaining Voltage
(IB = 0)
IC = 30 mA
for TIP105
for T IP102/TIP107
VCE(sat)* Collector-Emitt er
Saturation Voltage
IC = 3 A
IC = 8 A
VBE* Base-Emitter Voltage IC = 8 A
hFE* DC Current Gain
IC = 3 A
IC = 8 A
VF* Forward Voltage of
IF = - IC = 10 A
Commutation Diode
(IB = 0)
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 30 V
VCE = 50 V
VCB = 60 V
VCB = 100 V
IB = 6 mA
IB = 80 mA
VCE = 4 V
VCE = 4 V
VCE = 4 V
Min.
60
100
1000
200
Typ.
Max.
50
50
50
50
8
2
2.5
2.8
20000
2.8
Unit
µA
µA
µA
µA
mA
V
V
V
V
V
V
Safe Operating Area
2/4
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