THD277HI Datasheet, PDF (2/5 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

THD277HI
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
2.5
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off
Current (V_BE = 0)
IEBO Emitt er Cut-off Current
(IC = 0)
V_EBO Emitt er-Base Voltage
V_{CEO(sus )}∗ Collect or-Emitter
Sustaining Voltage
(I_B = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
VCE = 1500 V
VEB = 5 V
I_E = 10 mA
I_C = 100 mA
IC = 4 A
IB = 1 A
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = 4 A
IB = 1 A
hFE∗ DC Current G ain
IC = 4 A VCE = 5 V
IC = 4 A VCE = 5 V Tj = 100 ^oC
RESISTIVE LOAD
t_s
Storage Time
tf
Fall Time
VCC = 400 V
I_B1 = 1 A
IC = 4 A
I_B2 = -2 A
INDUCTIVE LOAD
t_s
Storage Time
tf
Fall Time
I_C = 4 A f = 15625 Hz
I_B1 = 1 A I_B2 = -2 A
Vc eflybac k
=
1050
s i n^{} ₁^π₀
10^{6}

t
V
Min. Typ.
10
700
6
4
2.1
140
4.3
370
M a x.
200
50
0.9
1.3
13
3.2
210
Unit
µA
µA
V
V
V
V
µs
ns
µs
ns
INDUCTIVE LOAD
t_s
Storage Time
tf
Fall Time
IC = 4 A f = 31250 Hz
I_B1 = 1 A I_B2 = -2 A
V_{c eflybac k}
=
1050
s i n^{} ₁^π₀
10^{6}

t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
4.3
µs
330
ns
Safe Operating Area
Thermal Impedance
2/5