THD218DHI Datasheet, PDF (2/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

THD218DHI
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
2.5
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
ICES
I_EBO
VCE(sat )∗
V_{BE(s at)}∗
hFE∗
ts
t_f
P a ram et er
Collector Cut-off
Current (V_BE = 0)
Emitter Cut-off Current
(IC = 0)
Co lle ct or- Em it t er
Saturation Voltage
Ba se-Em it t er
Saturation Voltage
DC Current G ain
INDUCTIVE LOAD
Storage Time
Fall Time
Test Conditions
VCE = 1500 V
V_CE = 1500 V
T_j = 125 ^oC
V_EB = 5 V
IC = 4 A
IB = 1 A
I_C = 4 A
I_B = 1 A
IC = 4 A VCE = 5 V
IC = 4 A VCE = 5 V Tj = 100 ^oC
I_C = 4 A
f = 15625 Hz
IB1 = 1 A
IB2 = -2 A
Vc eflybac k
=
1050
π
s i n_{ 5}
1 0^{6}

t
V
Min. Typ.
5
3.5
4.7
0.48
M a x.
0.2
2
300
1.5
1.3
10
Unit
mA
mA
mA
V
V
µs
µs
V_F
Diode Forward Voltage I_F = 4 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2.5
V
Safe Operating Area
Thermal Impedance
2/6