THD200FI Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

THD200FI
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
M ax
2.2
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off
Current (V_BE = 0)
VCE = 1500 V
V_CE = 1500 V T_j = 125 ^oC
I_EBO Emitt er Cut-off Current
(IC = 0)
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
(IC = 0)
V_EBO
Emitter-Base Voltage
(IB = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
V_EB = 5 V
IC = 100 mA
I_E = 10 mA
IC = 7 A IB = 1.5 A
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
I_C = 7 A I_B = 1.5 A
hFE∗ DC Current G ain
IC = 7 A VCE = 5 V
IC = 7 A VCE = 5 V Tj = 100 ^o C
RESISTIVE LOAD
ts
Storage Time
t_f
Fall Time
V_CC = 400 V I_C = 7 A
IB1 = 1.5 A
IB2 = 3.5 A
INDUCTIVE LOAD
ts
Storage Time
t_f
Fall Time
I_C = 7 A
f = 31250 Hz
IB1 = 1.5 A IB2 = -3.5 A
V_{c eflybac k}
=
1200
π
s i n_{ 5}
1 0^{6}

t
V
Min. Typ.
700
10
6.5
4
2.1
140
3.5
320
INDUCTIVE LOAD
I_C = 7 A
f = 64 KHz
ts
Storage Time
IB1 = 1.5 A IB2 = -3.5 A
1.7
tf
Fall Time
Vc eflybac k
=
1200
π
s i n_{ 5}
1 0^{6}

t
V
215
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
M a x.
0.2
2
100
1.5
1.3
13
3.1
210
Unit
mA
mA
µA
V
V
V
V
µs
ns
µs
ns
µs
ns
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