STX817 Datasheet, PDF (2/4 Pages) STMicroelectronics – NPN MEDIUM POWER TRANSISTOR

STX817
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
44.6
139
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = -120 V
VCE = -80 V
VEB = -5 V
IC = -10 mA
IC = -100 mA
IC = -1 A
IB = -10 mA
IB = -100 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -100 mA
IC = -1 A
IB = -10 mA
IB = -100 mA
hFE∗ DC Current Gain
IC = -100 mA
IC = -500 mA
IC = -1 A
VCE = -2 V
VCE = -2 V
VCE = -2 V
fT
Transition Frequency IC = -0.1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = -10 V
Min. Typ.
-80
140
80
40
50
Max.
-500
-1
-100
-0.25
-0.5
-1
-1.1
Unit
µA
mA
µA
V
V
V
V
V
MHz
2/4