STW18NK80Z Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 800V - 0.34W - 19A TO-247 Zener-Protected SuperMESH™Power MOSFET

STW18NK80Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
T_j
Operating Junction Temperature
T_stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I_SD ≤19A, di/dt ≤300A/µs, V_DD ≤ 800V , T_j ≤ T_JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
T_l
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BV_GSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Value
800
800
± 30
19
12
76
350
2.4
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
0.36
50
300
Max Value
19
700
°C/W
°C/W
°C
Unit
A
mJ
Min.
30
Typ.
Max. Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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