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| STTH602C Datasheet, PDF (2/9 Pages) STMicroelectronics – Ultrafast recovery diode | |||
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Characteristics
1
Characteristics
STTH602C
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
200
V
IF(RMS) RMS forward current
22
A
IF(AV) Average forward current, δ = 0.5
Per diode Tc = 160° C
3
TO-220AB
A
Per device Tc = 155° C
6
Per diode Tc = 150° C
3
TO-220FPAB
A
Per device Tc = 140° C
6
IFSM Surge non repetitive forward current
tp = 10 ms Sinusoidal
60
A
Tstg Storage temperature range
-65 to + 175 ° C
Tj
Maximum operating junction temperature
175
°C
Table 2. Thermal parameters
Symbol
Rth(j-c)
Junction to case
Rth(c)
Coupling
Parameter
TO-220AB
TO-220FPAB
TO-220AB
TO-220FPAB
Per diode
Per device
Per diode
Per device
Per diode
Per diode
Value
5
3.0
7.5
5.25
1
3
Unit
° C/W
When the two diodes 1 and 2 are used simultaneously:
âTj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
VF(2) Forward voltage drop
Tj = 25° C
Tj = 150° C
Tj = 25° C
Tj = 150° C
IF = 3 A
IF = 6 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.85 x IF(AV) + 0.033 IF2(RMS)
Typ Max. Unit
3
µA
3
30
0.98
1.1
0.8
0.95
V
1.1
1.25
0.9
1.05
2/9
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