STTA306B Datasheet, PDF (2/8 Pages) STMicroelectronics – TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

STTA306B
THERMAL AND POWER DATA
Symbol
Rth (j-c)
P1
Parameter
Junction to case
Conduction power dissipation
Pmax
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
Tests conditions
IF(AV) = 1.5A, δ = 0.5
Tc = 110°C
Tc = 108°C
Value
6
2.5
2.8
Unit
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF **
IR *
Vto
Rd
Test pulse :
Parameter
Forward voltage drop
Reverse leakage
current
Threshold voltage
Dynamic resistance
* tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
Tests conditions
Tj = 25°C IF = 3 A
Tj = 125°C IF = 3 A
Tj = 25°C VR = 0.8 X VRRM
Tj = 125°C
Ip < 3.IF(AV) Tj = 125°C
Min.
Typ.
1.3
500
Max.
1.85
1.65
20
1200
1.15
175
Unit
V
µA
V
mΩ
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + Rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
trr
Parameter
IRM
Maximum reverse
recovery current
S factor Softness factor
Test conditions
Tj = 25°C
IF=0.5A IR=1A Irr=0.25A
IF=1A dIF/dt= -50A/µs
VR=30V
Tj = 125°C
IF=3A VR=400V
dIF/dt = -16A/µs
dIF/dt = -50A/µs
Tj = 125°C VR=400V IF=3A
dIF/dt = -50A/µs
Min. Typ. Max. Unit
20
ns
50
A
1.2
2.0
1.1
-
TURN-ON SWITCHING
Symbol
Parameter
tfr
Forward recovery
time
VFP
Peak forward
voltage
Tj = 25°C
Tj = 25°C
Test conditions
IF=3A dIF/dt = 16A/µs
Measured at 1.1 x VFmax
IF=2A dIF/dt = 16A/µs
Min. Typ. Max. Unit
500 ns
10 V
2/8