STS5NF60L Datasheet, PDF (2/5 Pages) STMicroelectronics – N - CHANNEL 60V - 0.045ohm - 5A SO-8 STripFET POWER MOSFET

STS5NF60L
THERMAL DATA
R_thj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
Storage Temperature
50
150
-55 to 150
o_C/W
o_C
o_C
(*) Mounted on FR-4 board (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symbol
V_(BR)DSS
I_DSS
I_GSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero Gate Voltage
V_DS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating
T_c = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symbol
VGS(th)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10 V ID = 2.5 A
Resistance
V_GS = 4.5 V I_D = 2.5 A
Min.
1
Typ.
1.7
0.045
0.05
Max.
2.5
0.055
0.065
Unit
V
Ω
Ω
I_D(on) On State Drain Current V_DS > I_D(on) x R_DS(on)max
5
A
V_GS = 10 V
DYNAMIC
Symbol
g_fs (∗)
C_iss
C_oss
C_rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D = 2.5 A
Min.
Typ.
7
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0 V
1250
pF
130
pF
26
pF
2/5